Piezoelectricity across 2D Phase Boundaries

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 39 vom: 30. Sept., Seite e2206425
1. Verfasser: Puthirath, Anand B (VerfasserIn)
Weitere Verfasser: Zhang, Xiang, Krishnamoorthy, Aravind, Xu, Rui, Samghabadi, Farnaz Safi, Moore, David C, Lai, Jiawei, Zhang, Tianyi, Sanchez, David E, Zhang, Fu, Glavin, Nicholas R, Litvinov, Dmitri, Vajtai, Robert, Swaminathan, Venkataraman, Terrones, Mauricio, Zhu, Hanyu, Vashishta, Priya, Ajayan, Pulickel M
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials Schottky junctions in-plane homojunctions molybdenum(IV) telluride piezoelectricity
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520 |a Piezoelectricity in low-dimensional materials and metal-semiconductor junctions has attracted recent attention. Herein, a 2D in-plane metal-semiconductor junction made of multilayer 2H and 1T' phases of molybdenum(IV) telluride (MoTe2 ) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H-1T' junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a Schottky junctions 
650 4 |a in-plane homojunctions 
650 4 |a molybdenum(IV) telluride 
650 4 |a piezoelectricity 
700 1 |a Zhang, Xiang  |e verfasserin  |4 aut 
700 1 |a Krishnamoorthy, Aravind  |e verfasserin  |4 aut 
700 1 |a Xu, Rui  |e verfasserin  |4 aut 
700 1 |a Samghabadi, Farnaz Safi  |e verfasserin  |4 aut 
700 1 |a Moore, David C  |e verfasserin  |4 aut 
700 1 |a Lai, Jiawei  |e verfasserin  |4 aut 
700 1 |a Zhang, Tianyi  |e verfasserin  |4 aut 
700 1 |a Sanchez, David E  |e verfasserin  |4 aut 
700 1 |a Zhang, Fu  |e verfasserin  |4 aut 
700 1 |a Glavin, Nicholas R  |e verfasserin  |4 aut 
700 1 |a Litvinov, Dmitri  |e verfasserin  |4 aut 
700 1 |a Vajtai, Robert  |e verfasserin  |4 aut 
700 1 |a Swaminathan, Venkataraman  |e verfasserin  |4 aut 
700 1 |a Terrones, Mauricio  |e verfasserin  |4 aut 
700 1 |a Zhu, Hanyu  |e verfasserin  |4 aut 
700 1 |a Vashishta, Priya  |e verfasserin  |4 aut 
700 1 |a Ajayan, Pulickel M  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 39 vom: 30. Sept., Seite e2206425  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:39  |g day:30  |g month:09  |g pages:e2206425 
856 4 0 |u http://dx.doi.org/10.1002/adma.202206425  |3 Volltext 
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