Piezoelectricity across 2D Phase Boundaries

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 39 vom: 30. Sept., Seite e2206425
1. Verfasser:	Puthirath, Anand B (VerfasserIn)
Weitere Verfasser:	Zhang, Xiang, Krishnamoorthy, Aravind, Xu, Rui, Samghabadi, Farnaz Safi, Moore, David C, Lai, Jiawei, Zhang, Tianyi, Sanchez, David E, Zhang, Fu, Glavin, Nicholas R, Litvinov, Dmitri, Vajtai, Robert, Swaminathan, Venkataraman, Terrones, Mauricio, Zhu, Hanyu, Vashishta, Priya, Ajayan, Pulickel M
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2022
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 2D materials Schottky junctions in-plane homojunctions molybdenum(IV) telluride piezoelectricity

Beschreibung
Zusammenfassung:	© 2022 Wiley-VCH GmbH. Piezoelectricity in low-dimensional materials and metal-semiconductor junctions has attracted recent attention. Herein, a 2D in-plane metal-semiconductor junction made of multilayer 2H and 1T' phases of molybdenum(IV) telluride (MoTe2 ) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H-1T' junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials
Beschreibung:	Date Revised 28.09.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202206425