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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202203180
|2 doi
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|a pubmed24n1147.xml
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|a (DE-627)NLM344264564
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|a (NLM)35906760
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|a DE-627
|b ger
|c DE-627
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|a eng
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| 100 |
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|a Zhang, Fang
|e verfasserin
|4 aut
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|a Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 15.09.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs
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|a Journal Article
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|a antioxidants
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|a lead-free devices
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4 |
|a light-emitting diodes
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|a tin perovskites
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4 |
|a vapor-assisted recrystallization
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1 |
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|a Min, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Ya
|e verfasserin
|4 aut
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| 700 |
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|a Kuang, Zhiyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jiaqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Ziqian
|e verfasserin
|4 aut
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|a Wen, Kaichuan
|e verfasserin
|4 aut
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| 700 |
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|a Xu, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Chao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Haokun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhuo, Chunxue
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Nana
|e verfasserin
|4 aut
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| 700 |
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|a Chang, Jin
|e verfasserin
|4 aut
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|a Huang, Wei
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Jianpu
|e verfasserin
|4 aut
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| 773 |
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8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 37 vom: 16. Sept., Seite e2203180
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:37
|g day:16
|g month:09
|g pages:e2203180
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|u http://dx.doi.org/10.1002/adma.202203180
|3 Volltext
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|d 34
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|h e2203180
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