Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 37 vom: 16. Sept., Seite e2203180
1. Verfasser:	Zhang, Fang (VerfasserIn)
Weitere Verfasser:	Min, Hao, Zhang, Ya, Kuang, Zhiyuan, Wang, Jiaqi, Feng, Ziqian, Wen, Kaichuan, Xu, Lei, Yang, Chao, Shi, Haokun, Zhuo, Chunxue, Wang, Nana, Chang, Jin, Huang, Wei, Wang, Jianpu
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2022
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article antioxidants lead-free devices light-emitting diodes tin perovskites vapor-assisted recrystallization

Beschreibung
Zusammenfassung:	© 2022 Wiley-VCH GmbH. Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs
Beschreibung:	Date Revised 15.09.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202203180