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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108830
|2 doi
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|a pubmed24n1147.xml
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|a (DE-627)NLM344142973
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|a (NLM)35894513
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Andreev, Maksim
|e verfasserin
|4 aut
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|a Looking Beyond 0 and 1
|b Principles and Technology of Multi-Valued Logic Devices
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 23.12.2022
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|a Date Revised 23.12.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Ever since the invention of solid-state transistors, binary devices have dominated the electronics industry. Although the binary technology links the natural property of devices to be in the ON or OFF state with two logic levels, it provides the least possible information content per interconnect. Multi-valued logic (MVL) has long been considered as a means of improving the computation efficiency and reducing the power consumption of modern chips. In view of the power density limits of the conventional complementary metal-oxide-semiconductor technology, MVL technologies have recently gained even more attention, and various MVL unit devices based on conventional and emerging materials have been proposed. Herein, the recent achievements toward the development of compact MVL unit devices are reviewed. First, basic principles of MVL technologies are introduced by describing methods of obtaining multiple logic states and discussing radix-related aspects of MVL computation. Next, MVL unit devices are classified and overviewed with emphasis on principles of operation, technologies, and applications. Finally, a comparative discussion of strengths and weaknesses is provided for each class of MVL devices, and the review concludes with the outlook for the MVL field
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|a Journal Article
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|a Review
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|a multi-valued logic
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|a multiple-valued logic
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|a negative differential resistance
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|a negative differential transconductance
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|a organic materials
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|a ternary logic
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|a van der Waals materials
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|a Seo, Seunghwan
|e verfasserin
|4 aut
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|a Jung, Kil-Su
|e verfasserin
|4 aut
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|a Park, Jin-Hong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 51 vom: 01. Dez., Seite e2108830
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:51
|g day:01
|g month:12
|g pages:e2108830
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|u http://dx.doi.org/10.1002/adma.202108830
|3 Volltext
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