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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202204663
|2 doi
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|a pubmed25n1145.xml
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|a (DE-627)NLM343829282
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|a (NLM)35862931
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Kim, Taikyu
|e verfasserin
|4 aut
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|a Progress, Challenges, and Opportunities in Oxide Semiconductor Devices
|b A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 26.10.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal-oxide-semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed
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|a Journal Article
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|a Review
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|a 3D devices
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|a back-end-of-line transistors
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| 650 |
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|a field-effect transistors
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|a memory devices
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| 650 |
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|a monolithic 3D integration
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| 650 |
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|a oxide semiconductors
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| 650 |
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4 |
|a synaptic devices
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| 700 |
1 |
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|a Choi, Cheol Hee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hur, Jae Seok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ha, Daewon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kuh, Bong Jin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Yongsung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cho, Min Hee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Sangwook
|e verfasserin
|4 aut
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| 700 |
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|a Jeong, Jae Kyeong
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 43 vom: 18. Okt., Seite e2204663
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:43
|g day:18
|g month:10
|g pages:e2204663
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|u http://dx.doi.org/10.1002/adma.202204663
|3 Volltext
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|d 35
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