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|a 10.1002/adma.202202799
|2 doi
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|a pubmed24n1145.xml
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|a (DE-627)NLM343774062
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|a (NLM)35857340
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Seo, Seunghwan
|e verfasserin
|4 aut
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| 245 |
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|a A Van Der Waals Reconfigurable Multi-Valued Logic Device and Circuit Based on Tunable Negative-Differential-Resistance Phenomenon
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 08.09.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Multi-valued logic (MVL) technology that utilizes more than two logic states has recently been reconsidered because of the demand for greater power saving in current binary logic systems. Extensive efforts have been invested in developing MVL devices with multiple threshold voltages by adopting negative differential transconductance and resistance. In this study, a reconfigurable, multiple negative-differential-resistance (m-NDR) device with an electric-field-induced tunability of multiple threshold voltages is reported, which comprises a BP/ReS2 heterojunction and a ReS2 /h-BN/metal capacitor. Tunability for the m-NDR phenomenon is achieved via the resistance modulation of the ReS2 layer by electrical pulses applied to the capacitor region. Reconfigurability is verified in terms of the function of an MVL circuit composed of a reconfigurable m-NDR device and a load transistor, wherein staggered-type and broken-type double peak-NDR device operations are adopted for ternary inverter and latch circuits, respectively
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|a Journal Article
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|a multi-valued logic computing
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|a negative-differential-resistance
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|a reconfigurable devices and circuits
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|a ternary devices and circuits
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|a van der Waals layered materials
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|a Cho, Jeong-Ick
|e verfasserin
|4 aut
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|a Jung, Kil-Su
|e verfasserin
|4 aut
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|a Andreev, Maksim
|e verfasserin
|4 aut
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|a Lee, Ju-Hee
|e verfasserin
|4 aut
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|a Ahn, Hogeun
|e verfasserin
|4 aut
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|a Jung, Sooyoung
|e verfasserin
|4 aut
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|a Lee, Taeran
|e verfasserin
|4 aut
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|a Kim, Byeongchan
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Seojoo
|e verfasserin
|4 aut
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|a Kang, Juncheol
|e verfasserin
|4 aut
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|a Lee, Kyeong-Bae
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Ho-Jun
|e verfasserin
|4 aut
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|a Kim, Ki Seok
|e verfasserin
|4 aut
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|a Yeom, Geun Young
|e verfasserin
|4 aut
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|a Heo, Keun
|e verfasserin
|4 aut
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|a Park, Jin-Hong
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 36 vom: 01. Sept., Seite e2202799
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:36
|g day:01
|g month:09
|g pages:e2202799
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202202799
|3 Volltext
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