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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202202484
|2 doi
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|a pubmed24n1138.xml
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|a (DE-627)NLM341642452
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|a (NLM)35642101
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Ping, Xiaofan
|e verfasserin
|4 aut
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| 245 |
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|a Electrochemical Construction of Edge-Contacted Metal-Semiconductor Junctions with Low Contact Barrier
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 05.08.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a 2D semiconductors, such as MoS2 have emerged as promising ultrathin channel materials for the further scaling of field-effect transistors (FETs). However, the contact barrier at the metal-2D semiconductor junctions still significantly limits the device's performance. By extending the application of electrochemical deposition in 2D electronics, a distinct approach is developed for constructing metal-2D semiconductor junctions in an edge-contacted configuration through the edge-guided electrodeposition of varied metals. Both high-resolution microscopic imaging and electrical transport measurements confirm the successful creation of high-quality Pd-2D MoS2 junctions in desired geometry by combining electrodeposition with lithographic patterning. FETs are fabricated on the obtained Pd-2D MoS2 junctions and it is confirmed that these junctions exhibit a reduced contact barrier of ≈20 meV and extremely low contact resistance of 290 Ω µm and thus increase the averaged mobility of MoS2 FETs to ≈108 cm2 V -1 s-1 . This approach paves a new way for the construction of metal-semiconductor junctions and also demonstrates the great potential of the electrochemical deposition technique in 2D electronics
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|a Journal Article
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|a 2D
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|a electrodeposition
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|a field-effect transistors
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|a low contact barrier
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|a metal-semiconductor junctions
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| 700 |
1 |
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|a Liu, Weigang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Yueyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Guanchen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Fengen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Guangtao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiao, Liying
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 31 vom: 01. Aug., Seite e2202484
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:31
|g day:01
|g month:08
|g pages:e2202484
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|u http://dx.doi.org/10.1002/adma.202202484
|3 Volltext
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