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231226s2022 xx |||||o 00| ||eng c |
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7 |
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|a 10.1002/adma.202201188
|2 doi
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|a pubmed24n1134.xml
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Yanglizhi
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Slip-Line-Guided Growth of Graphene
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| 264 |
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|c 2022
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 14.07.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Manipulating the crystal orientation of emerging 2D materials via chemical vapor deposition (CVD) is a key premise for obtaining single-crystalline films and designing specific grain-boundary (GB) structures. Herein, the controllable crystal orientation of graphene during the CVD process is demonstrated on a single-crystal metal surface with preexisting atomic-scale stair steps resulting from dislocation slip lines. The slip-line-guided growth principle is established to explain and predict the crystal orientation distribution of graphene on a variety of metal facets, especially for the multidirectional growth cases on Cu(hk0) and Cu(hkl) substrates. Not only large-area single-crystal graphene, but also bicrystal graphene with controllable GB misorientations, are successfully synthesized by rationally employing tailored metal substrate facets. As a demonstration, bicrystal graphenes with misorientations of ≈21° and ≈11° are constructed on Cu(410) and Cu(430) foils, respectively. This guideline builds a bridge linking the crystal orientation of graphene and the substrate facet, thereby opening a new avenue for constructing bicrystals with the desired GB structures or manipulating 2D superlattice twist angles in a bottom-up manner
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|a Journal Article
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|a epitaxial growth
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|a grain-boundary engineering
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|a graphene
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| 650 |
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4 |
|a slip line
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| 700 |
1 |
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|a Liu, Haiyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chang, Zhenghua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Haoxiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Shenxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Li
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Hailin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wei, Yujie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Luzhao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 28 vom: 01. Juli, Seite e2201188
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:28
|g day:01
|g month:07
|g pages:e2201188
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202201188
|3 Volltext
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