Slip-Line-Guided Growth of Graphene
© 2022 Wiley-VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 28 vom: 01. Juli, Seite e2201188 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2022
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article epitaxial growth grain-boundary engineering graphene slip line |
| Zusammenfassung: | © 2022 Wiley-VCH GmbH. Manipulating the crystal orientation of emerging 2D materials via chemical vapor deposition (CVD) is a key premise for obtaining single-crystalline films and designing specific grain-boundary (GB) structures. Herein, the controllable crystal orientation of graphene during the CVD process is demonstrated on a single-crystal metal surface with preexisting atomic-scale stair steps resulting from dislocation slip lines. The slip-line-guided growth principle is established to explain and predict the crystal orientation distribution of graphene on a variety of metal facets, especially for the multidirectional growth cases on Cu(hk0) and Cu(hkl) substrates. Not only large-area single-crystal graphene, but also bicrystal graphene with controllable GB misorientations, are successfully synthesized by rationally employing tailored metal substrate facets. As a demonstration, bicrystal graphenes with misorientations of ≈21° and ≈11° are constructed on Cu(410) and Cu(430) foils, respectively. This guideline builds a bridge linking the crystal orientation of graphene and the substrate facet, thereby opening a new avenue for constructing bicrystals with the desired GB structures or manipulating 2D superlattice twist angles in a bottom-up manner |
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| Beschreibung: | Date Revised 14.07.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202201188 |