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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108261
|2 doi
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|a pubmed25n1131.xml
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|a (DE-627)NLM339647043
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|a (NLM)35435286
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Tiantian
|e verfasserin
|4 aut
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| 245 |
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|a Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 01.07.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In2 Se3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer "shear glide" and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline-crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. The nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In2 Se3 -covered layer, resulted from the combinations of material absorption and scattering
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|a Journal Article
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|a In2Se3
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|a all-optical switching
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|a optical memory
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|a optical switching
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|a structural phase transitions
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1 |
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|a Wang, Yong
|e verfasserin
|4 aut
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|a Li, Wei
|e verfasserin
|4 aut
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|a Mao, Dun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Benmore, Chris J
|e verfasserin
|4 aut
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|a Evangelista, Igor
|e verfasserin
|4 aut
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|a Xing, Huadan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Qiu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Feifan
|e verfasserin
|4 aut
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| 700 |
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|a Sivaraman, Ganesh
|e verfasserin
|4 aut
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|a Janotti, Anderson
|e verfasserin
|4 aut
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|a Law, Stephanie
|e verfasserin
|4 aut
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| 700 |
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|a Gu, Tingyi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 26 vom: 18. Juli, Seite e2108261
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:34
|g year:2022
|g number:26
|g day:18
|g month:07
|g pages:e2108261
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|u http://dx.doi.org/10.1002/adma.202108261
|3 Volltext
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