Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

An ultralow program/erase voltage ( |VP/E| = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field ( EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>10...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 69(2022), 6 vom: 05. Juni, Seite 2214-2221
1. Verfasser: Liao, Chun-Yu (VerfasserIn)
Weitere Verfasser: Hsiang, Kuo-Yu, Lou, Zhao-Feng, Lin, Chen-Ying, Tseng, Yi-Ju, Tseng, Han-Chen, Li, Zhi-Xian, Ray, Wei-Chang, Chang, Fu-Sheng, Wang, Chun-Chieh, Chen, Tzu-Chiang, Chang, Chih-Sheng, Lee, Min-Hung
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article Research Support, Non-U.S. Gov't