Style de citation APA

Liao, C., Hsiang, K., Lou, Z., Lin, C., Tseng, Y., Tseng, H., . . . Lee, M. (2022). Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 69(6), 2214. https://doi.org/10.1109/TUFFC.2022.3165047

Style de citation Chicago

Liao, Chun-Yu, et al. "Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)." IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 69, no. 6 (2022): 2214. https://dx.doi.org/10.1109/TUFFC.2022.3165047.

Style de citation MLA

Liao, Chun-Yu, et al. "Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)." IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 69, no. 6, 2022, p. 2214.