|
|
|
|
| LEADER |
01000caa a22002652c 4500 |
| 001 |
NLM338197052 |
| 003 |
DE-627 |
| 005 |
20250303040653.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231226s2022 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202200122
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n1127.xml
|
| 035 |
|
|
|a (DE-627)NLM338197052
|
| 035 |
|
|
|a (NLM)35288987
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Kumar, Mohit
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors
|
| 264 |
|
1 |
|c 2022
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 20.05.2022
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2022 Wiley-VCH GmbH.
|
| 520 |
|
|
|a The pursuit of a universal device that combines nonvolatile multilevel storage, ultrafast writing/erasing speed, nondestructive readout, and embedded processing with low power consumption demands the development of innovative architectures. Although thin-film transistors and redox-based resistive-switching devices have independently been proven to be ideal building blocks for data processing and storage, it is still difficult to achieve both well-controlled multilevel memory and high-precision ultrafast processing in a single unit, even though this is essential for the large-scale hardware implementation of in-memory computing. In this work, an ultrafast (≈42 ns) and programable redox thin-film transistor (ReTFT) memory made of a proximity-oxidation-grown TiO2 layer is developed, which has on/off ratio of 105 , nonvolatile multilevel analog storage with a long retention time, strong durability, and high reliability. Utilizing the proof-of-concept ReTFTs, circuits capable of performing fundamental NOT, AND, and OR operations with reconfigurable logic-in-memory processing are developed. Further, on-demand signal memory-processing operations, like multi-terminal addressable memory, learning, pattern recognition, and classification, are explored for prospective application in neuromorphic hardware. This device, which operates on a fundamentally different mechanism, presents an alternate solution to the problems associated with the creation of high-performing in-memory processing technology
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a in-memory processing
|
| 650 |
|
4 |
|a multi-terminals
|
| 650 |
|
4 |
|a proximity oxidation
|
| 650 |
|
4 |
|a ultrafast memory
|
| 650 |
|
4 |
|a ultrathin layers
|
| 700 |
1 |
|
|a Kim, Unjeong
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Lee, WangGon
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Seo, Hyungtak
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 20 vom: 30. Mai, Seite e2200122
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
|
| 773 |
1 |
8 |
|g volume:34
|g year:2022
|g number:20
|g day:30
|g month:05
|g pages:e2200122
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202200122
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 34
|j 2022
|e 20
|b 30
|c 05
|h e2200122
|