An Open-Ended Ni3 S2 -Co9 S8 Heterostructures Nanocage Anode with Enhanced Reaction Kinetics for Superior Potassium-Ion Batteries

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 18 vom: 19. Mai, Seite e2201420
1. Verfasser: Zhang, Shipeng (VerfasserIn)
Weitere Verfasser: Ling, Fangxin, Wang, Lifeng, Xu, Rui, Ma, Mingze, Cheng, Xiaolong, Bai, Ruilin, Shao, Yu, Huang, Huijuan, Li, Dongjun, Jiang, Yu, Rui, Xianhong, Bai, Jintao, Yao, Yu, Yu, Yan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Ni3S2-Co9S8 heterostructures chemical etching nanocage structures potassium-ion batteries
LEADER 01000naa a22002652 4500
001 NLM338163204
003 DE-627
005 20231226000043.0
007 cr uuu---uuuuu
008 231226s2022 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202201420  |2 doi 
028 5 2 |a pubmed24n1127.xml 
035 |a (DE-627)NLM338163204 
035 |a (NLM)35285559 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhang, Shipeng  |e verfasserin  |4 aut 
245 1 3 |a An Open-Ended Ni3 S2 -Co9 S8 Heterostructures Nanocage Anode with Enhanced Reaction Kinetics for Superior Potassium-Ion Batteries 
264 1 |c 2022 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 06.05.2022 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2022 Wiley-VCH GmbH. 
520 |a Sulfides are perceived as promising anode materials for potassium-ion batteries (PIBs) due to their high theoretical specific capacity and structural diversity. Nonetheless, the poor structural stability and sluggish kinetics of sulfides lead to unsatisfactory electrochemical performance. Herein, Ni3 S2 -Co9 S8 heterostructures with an open-ended nanocage structure wrapped by reduced graphene oxide (Ni-Co-SrGO cages) are well designed as the anode for PIBs via a selective etching and one-step sulfuration approach. The hollow Ni-Co-S@rGO nanocages, with large surface area, abundant heterointerfaces, and unique open-ended nanocage structure, can reduce the K+ diffusion length and promote reaction kinetics. When used as the anode for PIBs, the Ni-Co-S@rGO exhibits high reversible capacity and low capacity degradation (0.0089% per cycle over 2000 cycles at 10 A g-1 ). A potassium-ion full battery with a Ni-Co-S@rGO anode and Prussian blue cathode can display a superior reversible capacity of 400 mAh g-1 after 300 cycles at 2 A g-1 . The unique structural advantages and electrochemical reaction mechanisms of the Ni-Co-S@rGO are revealed by finite-element-simulation in situ characterizations. The universal synthesis technology of bimetallic sulfide anodes for advanced PIBs may provide vital guidance to design high-performance energy-storage materials 
650 4 |a Journal Article 
650 4 |a Ni3S2-Co9S8 heterostructures 
650 4 |a chemical etching 
650 4 |a nanocage structures 
650 4 |a potassium-ion batteries 
700 1 |a Ling, Fangxin  |e verfasserin  |4 aut 
700 1 |a Wang, Lifeng  |e verfasserin  |4 aut 
700 1 |a Xu, Rui  |e verfasserin  |4 aut 
700 1 |a Ma, Mingze  |e verfasserin  |4 aut 
700 1 |a Cheng, Xiaolong  |e verfasserin  |4 aut 
700 1 |a Bai, Ruilin  |e verfasserin  |4 aut 
700 1 |a Shao, Yu  |e verfasserin  |4 aut 
700 1 |a Huang, Huijuan  |e verfasserin  |4 aut 
700 1 |a Li, Dongjun  |e verfasserin  |4 aut 
700 1 |a Jiang, Yu  |e verfasserin  |4 aut 
700 1 |a Rui, Xianhong  |e verfasserin  |4 aut 
700 1 |a Bai, Jintao  |e verfasserin  |4 aut 
700 1 |a Yao, Yu  |e verfasserin  |4 aut 
700 1 |a Yu, Yan  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 18 vom: 19. Mai, Seite e2201420  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:18  |g day:19  |g month:05  |g pages:e2201420 
856 4 0 |u http://dx.doi.org/10.1002/adma.202201420  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 34  |j 2022  |e 18  |b 19  |c 05  |h e2201420