Aggregation Control, Surface Passivation, and Optimization of Device Structure toward Near-Infrared Perovskite Quantum-Dot Light-Emitting Diodes with an EQE up to 15.4

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 18 vom: 01. Mai, Seite e2109785
1. Verfasser: Tseng, Zong-Liang (VerfasserIn)
Weitere Verfasser: Chen, Lung-Chien, Chao, Li-Wei, Tsai, Meng-Ju, Luo, Dian, Al Amin, Nurul Ridho, Liu, Shun-Wei, Wong, Ken-Tsung
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article near-infrared emission perovskites quantum dots quantum-dot light-emitting diodes
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
In recent years, the performance of perovskite quantum dots (QDs) and QD-based light-emitting diodes (QLEDs) has improved greatly, with electroluminescence (EL) efficiency of green and red emission exceeding 20%. However, the development of perovskite near-infrared (NIR) QLEDs has reached stagnation, where the reported maximum EL efficiency is still below 6%, limiting their further applications. In this work, new NIR-emissive FAPbI3 QDs are developed by post-treating long alkyl-encapsulated QDs with 2-phenylethylammonium iodide (PEAI). The incorporation of PEAI reduces the QD surface defects for giving a high photoluminescence quantum yield up to 61.6%. The n-octane solution of PEAI-passivated FAPbI3 QDs is spin coated on top of the PEDOT:PSS-treated ITO electrode modified with a thermally crosslinked hole-transporting layer to give a full-coverage, smooth, and dense QD film. Incorporating with an effective electron-transporting material, CN-T2T, which has deep lowest unoccupied molecular orbital and good electron mobility, the optimal device with EL λmax at 772 nm achieves an external quantum efficiency up to 15.4% at a current density of 0.54 mA cm-2 (2.6 V), which is the highest efficiency ever reported for perovskite-based NIR QLEDs. This study provides a facile strategy to prepare high-quality perovskite QD films suitable for highly efficient NIR QLED applications
Beschreibung:Date Revised 06.05.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202109785