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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202110454
|2 doi
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|a pubmed24n1120.xml
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|a (NLM)35085406
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
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|a Kang, Yun-Ho
|e verfasserin
|4 aut
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| 245 |
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|a Large-Area Uniform 1-nm-Level Amorphous Carbon Layers from 3D Conformal Polymer Brushes. A "Next-Generation" Cu Diffusion Barrier?
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 14.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a A reliable method for preparing a conformal amorphous carbon (a-C) layer with a thickness of 1-nm-level, is tested as a possible Cu diffusion barrier layer for next-generation ultrahigh-density semiconductor device miniaturization. A polystyrene brush of uniform thickness is grafted onto 4-inch SiO2 /Si wafer substrates with "self-limiting" chemistry favoring such a uniform layer. UV crosslinking and subsequent carbonization transforms this polymer film into an ultrathin a-C layer without pinholes or hillocks. The uniform coating of nonplanar regions or surfaces is also possible. The Cu diffusion "blocking ability" is evaluated by time-dependent dielectric breakdown (TDDB) tests using a metal-oxide-semiconductor (MOS) capacitor structure. A 0.82 nm-thick a-C barrier gives TDDB lifetimes 3.3× longer than that obtained using the conventional 1.0 nm-thick TaNx diffusion barrier. In addition, this exceptionally uniform ultrathin polymer and a-C film layers hold promise for selective ion permeable membranes, electrically and thermally insulating films in electronics, slits of angstrom-scale thickness, and, when appropriately functionalized, as a robust ultrathin coating with many other potential applications
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|a Journal Article
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|a Cu diffusion barrier
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|a amorphous carbon
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|a carbonization
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|a polymer grafting
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|a Lee, Sangbong
|e verfasserin
|4 aut
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|a Choi, Youngwoo
|e verfasserin
|4 aut
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|a Seong, Won Kyung
|e verfasserin
|4 aut
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|a Han, Kyu Hyo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jang Hwan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Hyun-Mi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Seungbum
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Sun Hwa
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ruoff, Rodney S
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Ki-Bum
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Sang Ouk
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 15 vom: 15. Apr., Seite e2110454
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:15
|g day:15
|g month:04
|g pages:e2110454
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|u http://dx.doi.org/10.1002/adma.202110454
|3 Volltext
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