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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202109282
|2 doi
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|a pubmed24n1120.xml
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|a (DE-627)NLM336101880
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|a (NLM)35075693
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|a DE-627
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|c DE-627
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|a eng
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|a Yin, Xiuping
|e verfasserin
|4 aut
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|a Enabling Fast Na+ Transfer Kinetics in the Whole-Voltage-Region of Hard-Carbon Anodes for Ultrahigh-Rate Sodium Storage
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Efficient electrode materials, that combine high power and high energy, are the crucial requisites of sodium-ion batteries (SIBs), which have unwrapped new possibilities in the areas of grid-scale energy storage. Hard carbons (HCs) are considered as the leading candidate anode materials for SIBs, however, the primary challenge of slow charge-transfer kinetics at the low potential region (<0.1 V) remains unresolved till date, and the underlying structure-performance correlation is under debate. Herein, ultrafast sodium storage in the whole-voltage-region (0.01-2 V), with the Na+ diffusion coefficient enhanced by 2 orders of magnitude (≈10-7 cm2 s-1 ) through rationally deploying the physical parameters of HCs using a ZnO-assisted bulk etching strategy is reported. It is unveiled that the Na+ adsorption energy (Ea ) and diffusion barrier (Eb ) are in a positive and negative linear relationship with the carbon p-band center, respectively, and balance of Ea and Eb is critical in enhancing the charge-storage kinetics. The charge-storage mechanism in HCs is evidenced through comprehensive in(ex) situ techniques. The as prepared HCs microspheres deliver a record high rate performance of 107 mAh g-1 50 A g-1 and unprecedented electrochemical performance at extremely low temperature (426 mAh g-1 @ -40 °C)
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|a Journal Article
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|a anodes
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|a hard carbon
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|a sodium storage
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|a sodium-ion batteries
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|a whole-voltage-region
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|a Lu, Zhixiu
|e verfasserin
|4 aut
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|a Wang, Jing
|e verfasserin
|4 aut
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|a Feng, Xiaochen
|e verfasserin
|4 aut
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|a Roy, Swagata
|e verfasserin
|4 aut
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|a Liu, Xiangsi
|e verfasserin
|4 aut
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|a Yang, Yong
|e verfasserin
|4 aut
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|a Zhao, Yufeng
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Jiujun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 13 vom: 28. Apr., Seite e2109282
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:13
|g day:28
|g month:04
|g pages:e2109282
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|u http://dx.doi.org/10.1002/adma.202109282
|3 Volltext
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