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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108412
|2 doi
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|a pubmed24n1118.xml
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|a (DE-627)NLM335541690
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|a (NLM)35019191
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Jeong, Min-Hye
|e verfasserin
|4 aut
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| 245 |
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|a Multilayer WSe2 /MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.02.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound excitons. Accordingly, multilayered TMDs with a direct bandgap and an enhanced carrier lifetime are required for the development of various optoelectronic devices. Here, periodically arrayed nanopore structures (PANS) are proposed for improving the efficiency of multilayered p-WSe2 /n-MoS2 phototransistors. Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe2 /n-MoS2 heterostructures with PANS. The characteristics of the heterojunction devices with PANS reveal an enhanced responsivity and detectivity measured under 405 nm laser excitation, which at 1.7 × 104 A W-1 and 1.7 × 1013 Jones are almost two orders of magnitude higher than those of pristine devices, 3.6 × 102 A W-1 and 3.6 × 1011 Jones, respectively. Such enhanced optical properties of WSe2 /MoS2 heterojunctions with PANS represent a significant step toward next-generation optoelectronic applications
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|a Journal Article
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|a bandgap engineering
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|a heterojunction photodetectors
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| 650 |
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|a periodically arrayed nanopore structures
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4 |
|a transition metal dichalcogenides
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1 |
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|a Ra, Hyun-Soo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Sang-Hyeon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kwak, Do-Hyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ahn, Jongtae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yun, Won Seok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, JaeDong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chae, Weon-Sik
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hwang, Do Kyung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Jong-Soo
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 8 vom: 21. Feb., Seite e2108412
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:8
|g day:21
|g month:02
|g pages:e2108412
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202108412
|3 Volltext
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