Multilayer WSe2 /MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 8 vom: 21. Feb., Seite e2108412
1. Verfasser: Jeong, Min-Hye (VerfasserIn)
Weitere Verfasser: Ra, Hyun-Soo, Lee, Sang-Hyeon, Kwak, Do-Hyun, Ahn, Jongtae, Yun, Won Seok, Lee, JaeDong, Chae, Weon-Sik, Hwang, Do Kyung, Lee, Jong-Soo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bandgap engineering heterojunction photodetectors periodically arrayed nanopore structures transition metal dichalcogenides
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound excitons. Accordingly, multilayered TMDs with a direct bandgap and an enhanced carrier lifetime are required for the development of various optoelectronic devices. Here, periodically arrayed nanopore structures (PANS) are proposed for improving the efficiency of multilayered p-WSe2 /n-MoS2 phototransistors. Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe2 /n-MoS2 heterostructures with PANS. The characteristics of the heterojunction devices with PANS reveal an enhanced responsivity and detectivity measured under 405 nm laser excitation, which at 1.7 × 104 A W-1 and 1.7 × 1013 Jones are almost two orders of magnitude higher than those of pristine devices, 3.6 × 102 A W-1 and 3.6 × 1011 Jones, respectively. Such enhanced optical properties of WSe2 /MoS2 heterojunctions with PANS represent a significant step toward next-generation optoelectronic applications
Beschreibung:Date Revised 24.02.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202108412