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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202107908
|2 doi
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|a pubmed24n1116.xml
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|a (DE-627)NLM335049451
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|a (NLM)34969153
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Hou, Zhipeng
|e verfasserin
|4 aut
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| 245 |
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|a Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric Fields
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 17.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Magnetic skyrmions are topological swirling spin configurations that hold promise for building future magnetic memories and logic circuits. Skyrmionic devices typically rely on the electrical manipulation of a single skyrmion, but controllably manipulating a group of skyrmions can lead to more compact and memory-efficient devices. Here, an electric-field-driven cascading transition of skyrmion clusters in a nanostructured ferromagnetic/ferroelectric multiferroic heterostructure is reported, which allows a continuous multilevel transition of the number of skyrmions in a one-by-one manner. Most notably, the transition is non-volatile and reversible, which is crucial for multi-bit memory applications. Combined experiments and theoretical simulations reveal that the switching of skyrmion clusters is induced by the strain-mediated modification of both the interfacial Dzyaloshinskii-Moriya interaction and effective uniaxial anisotropy. The results not only open up a new direction for constructing low-power-consuming, non-volatile, and multi-bit skyrmionic devices, but also offer valuable insights into the fundamental physics underlying the voltage manipulation of skyrmion clusters
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|a Journal Article
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|a electric fields
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|a low-power-consuming devices
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|a multi-state switching
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|a skyrmion clusters
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|a Wang, Yadong
|e verfasserin
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|a Lan, Xiaoming
|e verfasserin
|4 aut
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|a Li, Sai
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|4 aut
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|a Wan, Xuejin
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|4 aut
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|a Meng, Fei
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|a Hu, Yangfan
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|a Fan, Zhen
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|a Feng, Chun
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|a Qin, Minghui
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|a Zeng, Min
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|4 aut
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|a Zhang, Xichao
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|a Liu, Xiaoxi
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|a Fu, Xuewen
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|a Yu, Guanghua
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|a Zhou, Guofu
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|a Zhou, Yan
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|a Zhao, Weisheng
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|a Gao, Xingsen
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|a Liu, Jun-Ming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 11 vom: 21. März, Seite e2107908
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:11
|g day:21
|g month:03
|g pages:e2107908
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|u http://dx.doi.org/10.1002/adma.202107908
|3 Volltext
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