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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202101730
|2 doi
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|a pubmed24n1114.xml
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|a (DE-627)NLM334445906
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|a (NLM)34908193
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Shin, Inseob
|e verfasserin
|4 aut
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|a Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 24.02.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (ξ) and electrical conductivity (σ), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3 GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of ξ ≈ 4.6 and σ ≈ 2.25 × 105 Ω-1 m-1 for WTe2 . Moreover, the significantly reduced switching current density of 3.90 × 106 A cm-2 at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics
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|a Journal Article
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|a current-induced magnetization switching
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|a energy-efficient SOT device
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|a interface engineering
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|a spin-orbit torque
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|a van der Waals materials
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|a Cho, Won Joon
|e verfasserin
|4 aut
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|a An, Eun-Su
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|a Park, Sungyu
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|a Jeong, Hyeon-Woo
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|a Jang, Seong
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|a Baek, Woon Joong
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|a Park, Seong Yong
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|a Yang, Dong-Hwan
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|a Seo, Jun Ho
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|a Kim, Gi-Yeop
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|a Ali, Mazhar N
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|a Choi, Si-Young
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|a Lee, Hyun-Woo
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|a Kim, Jun Sung
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|a Kim, Sung Dug
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|a Lee, Gil-Ho
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 8 vom: 20. Feb., Seite e2101730
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:8
|g day:20
|g month:02
|g pages:e2101730
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|u http://dx.doi.org/10.1002/adma.202101730
|3 Volltext
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