Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 8 vom: 20. Feb., Seite e2101730 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2022
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article current-induced magnetization switching energy-efficient SOT device interface engineering spin-orbit torque van der Waals materials |
Zusammenfassung: | © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH. Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (ξ) and electrical conductivity (σ), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3 GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of ξ ≈ 4.6 and σ ≈ 2.25 × 105 Ω-1 m-1 for WTe2 . Moreover, the significantly reduced switching current density of 3.90 × 106 A cm-2 at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics |
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Beschreibung: | Date Revised 24.02.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.202101730 |