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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202106954
|2 doi
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|a pubmed24n1110.xml
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|a (DE-627)NLM333045521
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|a (NLM)34766672
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|a DE-627
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|a eng
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|a Jiang, Pengcheng
|e verfasserin
|4 aut
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|a Quenching-Resistant Multiresonance TADF Emitter Realizes 40% External Quantum Efficiency in Narrowband Electroluminescence at High Doping Level
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 21.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Multiresonance thermally activated delayed fluorescence (MR-TADF) emitters manifest great potential for organic light-emitting diodes (OLEDs) due to their high exciton-utilization efficiency and narrowband emission. Nonetheless, their tendency toward self-quenching caused by strong interchromophore interactions would induce doping sensitivity and deteriorate the device performances, and effective strategy to construct quenching-resistant emitters without sacrifycing color purity is still to be developed. By segregating the planar MR-TADF skeleton using two bulky carbazolyl units, herein a highly emissive molecule with enhanced quenching resistance is reported. The steric effect largely removes the formation of detrimental excimers/aggregates, and boosts the performance of the corresponding devices with a maximum external quantum efficiency (EQEmax ) up to 40.0% and full width at half maximum (FWHM) of 25 nm, representative of the only example of single OLED that can concurrently achieve narrow bandwidth and high EL efficiency surpassing 40% to date. Even at doping ratio of 30 wt%, the EQEmax is retained to be 33.3% with nearly unchanged emission spectrum. This work provides a viable approach to realize doping-insensitive MR-TADF devices with extreme EL efficiency and color purity for high-end OLED displays
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|a Journal Article
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|a doping
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|a multiresonance
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|a narrowband electroluminescence
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|a quenching resistance
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|a Miao, Jingsheng
|e verfasserin
|4 aut
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|a Cao, Xiaosong
|e verfasserin
|4 aut
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|a Xia, Han
|e verfasserin
|4 aut
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|a Pan, Ke
|e verfasserin
|4 aut
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|a Hua, Tao
|e verfasserin
|4 aut
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|a Lv, Xialei
|e verfasserin
|4 aut
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|a Huang, Zhongyan
|e verfasserin
|4 aut
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|a Zou, Yang
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Chuluo
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 3 vom: 03. Jan., Seite e2106954
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:3
|g day:03
|g month:01
|g pages:e2106954
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|u http://dx.doi.org/10.1002/adma.202106954
|3 Volltext
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