Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

© 2021 Wiley-VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 5 vom: 17. Feb., Seite e2106814
Auteur principal: Liu, Fang (Auteur)
Autres auteurs: Wang, Tao, Zhang, Zhihong, Shen, Tong, Rong, Xin, Sheng, Bowen, Yang, Liuyun, Li, Duo, Wei, Jiaqi, Sheng, Shanshan, Li, Xingguang, Chen, Zhaoying, Tao, Renchun, Yuan, Ye, Yang, Xuelin, Xu, Fujun, Zhang, Jingmin, Liu, Kaihui, Li, Xin-Zheng, Shen, Bo, Wang, Xinqiang
Format: Article en ligne
Langue:English
Publié: 2022
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article epitaxial growth interface atomic configuration lattice polarity layered graphene wurtzite gallium nitride
Description
Résumé:© 2021 Wiley-VCH GmbH.
Quasi van der Waals epitaxy, a pioneering epitaxy of sp3 -hybridized semiconductor films on sp2 -hybridized 2D materials, provides a way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III-nitride epilayer until now. Here, it is reported that the epitaxy of gallium nitride (GaN) on graphene can tune the atom arrangement (lattice polarity) through manipulation of the interface atomic configuration, where GaN films with gallium and nitrogen polarity are achieved by forming CONGa(3) or COGaN(3) configurations, respectively, on artificial CO surface dangling bonds by atomic oxygen pre-irradiation on trilayer graphene. Furthermore, an aluminum nitride buffer/interlayer leads to unique metal polarity due to the formation of an AlON thin layer in a growth environment containing trace amounts of oxygen, which explains the open question of why those reported wurtzite III-nitride films on 2D materials always exhibit metal polarity. The reported atomic modulation through interface manipulation provides an effective model for hexagonal nitride semiconductor layers grown on graphene, which definitely promotes the development of novel semiconductor devices
Description:Date Revised 03.02.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202106814