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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202107104
|2 doi
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|a pubmed24n1109.xml
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|a (DE-627)NLM332814254
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|a (NLM)34743375
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wang, Yadong
|e verfasserin
|4 aut
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|a Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 21.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS2 , such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier-exciton and carrier-phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging
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|a Journal Article
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|a electronic states
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|a monolayer transition metal dichalcogenides
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|a static third-harmonic spectroscopy
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|a third-harmonic generation
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|a transient third-harmonic spectroscopy
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|a Iyikanat, Fadil
|e verfasserin
|4 aut
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1 |
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|a Rostami, Habib
|e verfasserin
|4 aut
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|a Bai, Xueyin
|e verfasserin
|4 aut
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|a Hu, Xuerong
|e verfasserin
|4 aut
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|a Das, Susobhan
|e verfasserin
|4 aut
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|a Dai, Yunyun
|e verfasserin
|4 aut
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|a Du, Luojun
|e verfasserin
|4 aut
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|a Zhang, Yi
|e verfasserin
|4 aut
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|a Li, Shisheng
|e verfasserin
|4 aut
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|a Lipsanen, Harri
|e verfasserin
|4 aut
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|a García de Abajo, F Javier
|e verfasserin
|4 aut
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|a Sun, Zhipei
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 3 vom: 06. Jan., Seite e2107104
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:3
|g day:06
|g month:01
|g pages:e2107104
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|u http://dx.doi.org/10.1002/adma.202107104
|3 Volltext
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|d 34
|j 2022
|e 3
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|c 01
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