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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202104942
|2 doi
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|a pubmed24n1103.xml
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|a (DE-627)NLM331107392
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|a (NLM)34569099
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Wang, Zhen
|e verfasserin
|4 aut
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|a Controllable Doping in 2D Layered Materials
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.12.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8 Se1.2 , PdSe2 , and WSe2 is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications
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|a Journal Article
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|a controllable doping
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|a electronic materials
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|a lattice deformation
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|a layered materials
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|a optoelectronics
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|a Xia, Hui
|e verfasserin
|4 aut
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|a Wang, Peng
|e verfasserin
|4 aut
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|a Zhou, Xiaohao
|e verfasserin
|4 aut
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|a Liu, Chunsen
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|4 aut
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|a Zhang, Qinghua
|e verfasserin
|4 aut
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|a Wang, Fang
|e verfasserin
|4 aut
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|a Huang, Menglin
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|4 aut
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|a Chen, Shiyou
|e verfasserin
|4 aut
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|a Wu, Peisong
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|4 aut
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|a Chen, Yunfeng
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|a Ye, Jiafu
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|4 aut
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|a Huang, Shenyang
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|4 aut
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|a Yan, Hugen
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|4 aut
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|a Gu, Lin
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|4 aut
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|a Miao, Jinshui
|e verfasserin
|4 aut
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|a Li, Tianxin
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|4 aut
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| 700 |
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|a Chen, Xiaoshuang
|e verfasserin
|4 aut
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| 700 |
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|a Lu, Wei
|e verfasserin
|4 aut
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| 700 |
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|a Zhou, Peng
|e verfasserin
|4 aut
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| 700 |
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|a Hu, Weida
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 48 vom: 01. Dez., Seite e2104942
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:48
|g day:01
|g month:12
|g pages:e2104942
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|u http://dx.doi.org/10.1002/adma.202104942
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
|
|
|a GBV_NLM
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| 912 |
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|a GBV_ILN_350
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| 951 |
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|a AR
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| 952 |
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|d 33
|j 2021
|e 48
|b 01
|c 12
|h e2104942
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