Controllable Doping in 2D Layered Materials

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 48 vom: 01. Dez., Seite e2104942
1. Verfasser:	Wang, Zhen (VerfasserIn)
Weitere Verfasser:	Xia, Hui, Wang, Peng, Zhou, Xiaohao, Liu, Chunsen, Zhang, Qinghua, Wang, Fang, Huang, Menglin, Chen, Shiyou, Wu, Peisong, Chen, Yunfeng, Ye, Jiafu, Huang, Shenyang, Yan, Hugen, Gu, Lin, Miao, Jinshui, Li, Tianxin, Chen, Xiaoshuang, Lu, Wei, Zhou, Peng, Hu, Weida
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2021
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article controllable doping electronic materials lattice deformation layered materials optoelectronics

Beschreibung
Zusammenfassung:	© 2021 Wiley-VCH GmbH. For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8 Se1.2 , PdSe2 , and WSe2 is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications
Beschreibung:	Date Revised 01.12.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202104942