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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.1c02211
|2 doi
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|a pubmed24n1103.xml
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|a DE-627
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|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Liu, Tzu-Ling
|e verfasserin
|4 aut
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| 245 |
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|a Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 05.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a To enable area-selective atomic layer deposition (AS-ALD), self-assembled monolayers (SAMs) have been used as the surface inhibitor to block a variety of ALD processes. The integrity of the SAM throughout the ALD process is critical to AS-ALD. Despite the demonstrated effectiveness of inhibition by SAMs, nucleation during ALD eventually occurs on SAM-protected surfaces, but its impact on SAM structures is still not fully understood. In this study, we chose the octadecyltrichlorosilane (ODTS) SAM as a model system to investigate the evolution of crystallinity and structure of SAMs before and after ALD. The breakdown behavior of SAMs when exposed to ZnO and Al2O3 ALD was systematically studied by combining synchrotron X-ray techniques and electron microscopy. We show that the crystallinity and structure of ODTS SAMs grown on Si substrates remain intact until a significant amount of material deposition takes place. In addition, the undesired ALD materials that grow on ODTS SAMs present contrasting morphologies: dispersed nanoparticles for ZnO while relatively continuous film for Al2O3. Lastly, substrate dependency was explored by comparing a Si substrate to single-crystal sapphire. Similar results in the evolution of SAM crystallinity and formation of ALD nuclei on top of SAM are observed in the ODTS-sapphire system. This study provides an in-depth view of the influence of ALD processes on the SAM structure and the nucleation behavior of ALD on SAM-protected surfaces
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|a Journal Article
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1 |
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|a Zeng, Li
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Nardi, Katie L
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hausmann, Dennis M
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bent, Stacey F
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 37(2021), 39 vom: 05. Okt., Seite 11637-11645
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:37
|g year:2021
|g number:39
|g day:05
|g month:10
|g pages:11637-11645
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|u http://dx.doi.org/10.1021/acs.langmuir.1c02211
|3 Volltext
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