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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202102091
|2 doi
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|a pubmed24n1100.xml
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|a (DE-627)NLM330229389
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|a (NLM)34480507
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Pak, Sangyeon
|e verfasserin
|4 aut
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|a Electrode-Induced Self-Healed Monolayer MoS2 for High Performance Transistors and Phototransistors
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Contact engineering for monolayered transition metal dichalcogenides (TMDCs) is considered to be of fundamental challenge for realizing high-performance TMDCs-based (opto) electronic devices. Here, an innovative concept is established for a device configuration with metallic copper monosulfide (CuS) electrodes that induces sulfur vacancy healing in the monolayer molybdenum disulfide (MoS2 ) channel. Excess sulfur adatoms from the metallic CuS electrodes are donated to heal sulfur vacancy defects in MoS2 that surprisingly improve the overall performance of its devices. The electrode-induced self-healing mechanism is demonstrated and analyzed systematically using various spectroscopic analyses, density functional theory (DFT) calculations, and electrical measurements. Without any passivation layers, the self-healed MoS2 (photo)transistor with the CuS contact electrodes show outstanding room temperature field effect mobility of 97.6 cm2 (Vs)-1 , On/Off ratio > 108 , low subthreshold swing of 120 mV per decade, high photoresponsivity of 1 × 104 A W-1 , and detectivity of 1013 jones, which are the best among back-gated transistors that employ 1L MoS2 . Using ultrathin and flexible 2D CuS and MoS2 , mechanically flexible photosensor is also demonstrated, which shows excellent durability under mechanical strain. These findings demonstrate a promising strategy in TMDCs or other 2D material for the development of high performance and functional devices including self-healable sulfide electrodes
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|a Journal Article
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|a MoS2
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|a flexible photodetector
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|a high mobility transistor
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|a low subthreshold swing
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|a self-healing
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|a ultrasensitive photodetection
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|a Jang, Seunghun
|e verfasserin
|4 aut
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1 |
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|a Kim, Taehun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lim, Jungmoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hwang, Jae Seok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cho, Yuljae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chang, Hyunju
|e verfasserin
|4 aut
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| 700 |
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|a Jang, A-Rang
|e verfasserin
|4 aut
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| 700 |
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|a Park, Kyung-Ho
|e verfasserin
|4 aut
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1 |
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|a Hong, John
|e verfasserin
|4 aut
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| 700 |
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|a Cha, SeungNam
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 41 vom: 01. Okt., Seite e2102091
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:41
|g day:01
|g month:10
|g pages:e2102091
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|u http://dx.doi.org/10.1002/adma.202102091
|3 Volltext
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