Electrode-Induced Self-Healed Monolayer MoS2 for High Performance Transistors and Phototransistors
© 2021 Wiley-VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 41 vom: 01. Okt., Seite e2102091 |
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| Weitere Verfasser: | , , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2021
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article MoS2 flexible photodetector high mobility transistor low subthreshold swing self-healing ultrasensitive photodetection |
| Zusammenfassung: | © 2021 Wiley-VCH GmbH. Contact engineering for monolayered transition metal dichalcogenides (TMDCs) is considered to be of fundamental challenge for realizing high-performance TMDCs-based (opto) electronic devices. Here, an innovative concept is established for a device configuration with metallic copper monosulfide (CuS) electrodes that induces sulfur vacancy healing in the monolayer molybdenum disulfide (MoS2 ) channel. Excess sulfur adatoms from the metallic CuS electrodes are donated to heal sulfur vacancy defects in MoS2 that surprisingly improve the overall performance of its devices. The electrode-induced self-healing mechanism is demonstrated and analyzed systematically using various spectroscopic analyses, density functional theory (DFT) calculations, and electrical measurements. Without any passivation layers, the self-healed MoS2 (photo)transistor with the CuS contact electrodes show outstanding room temperature field effect mobility of 97.6 cm2 (Vs)-1 , On/Off ratio > 108 , low subthreshold swing of 120 mV per decade, high photoresponsivity of 1 × 104 A W-1 , and detectivity of 1013 jones, which are the best among back-gated transistors that employ 1L MoS2 . Using ultrathin and flexible 2D CuS and MoS2 , mechanically flexible photosensor is also demonstrated, which shows excellent durability under mechanical strain. These findings demonstrate a promising strategy in TMDCs or other 2D material for the development of high performance and functional devices including self-healable sulfide electrodes |
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| Beschreibung: | Date Revised 13.10.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202102091 |