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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202102055
|2 doi
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|a pubmed24n1094.xml
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|a eng
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|a Yu, Bin-Bin
|e verfasserin
|4 aut
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|a Heterogeneous 2D/3D Tin-Halides Perovskite Solar Cells with Certified Conversion Efficiency Breaking 14
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 10.09.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a As the most promising lead-free one, tin-halides based perovskite solar cells still suffer from the severe bulk-defect due to the easy oxidation of tin from divalent to tetravalent. Here, a general and effective strategy is delivered to modulate the microstructure of 2D/3D heterogeneous tin-perovskite absorber films by substituting FAI with FPEABr in FASnI3 . The introduction of 2D phase can induce highly oriented growth of 3D FASnI3 and it is revealed in the optimal 2D/3D film that 2D phase embraces 3D grains and locates at the surfaces and grain boundaries. The FPEA+ based 2D tin-perovskite capping layer can offer a reducing atmosphere for vulnerable 3D FASnI3 grains. The unique microstructure effectively suppresses the well-known oxidation from Sn2+ to Sn4+ , as well as decreasing defect density, which leads to a remarkable enhanced device performance from 9.38% to 14.81% in conversion efficiency. The certified conversion efficiency of 14.03% announces a new record and moves a remarkable step from the last one (12.4%). Besides of this breakthrough, this work definitely paves a new way to fabricate high-quality tin-perovskite absorber film by constructing effective 2D/3D microstructures
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|a Journal Article
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|a 2D/3D heterogeneous tin-perovskite absorbers
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|a conversion efficiency
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|a lead-free perovskite solar cells
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|a oxidation of tin
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|a tin-halide perovskites
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|a Chen, Zhenhua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Yudong
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Yiyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Bing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Guocong
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Xusheng
|e verfasserin
|4 aut
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| 700 |
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|a Du, Zheng
|e verfasserin
|4 aut
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| 700 |
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|a He, Zhubing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 36 vom: 16. Sept., Seite e2102055
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:36
|g day:16
|g month:09
|g pages:e2102055
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|u http://dx.doi.org/10.1002/adma.202102055
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