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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202102252
|2 doi
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|a pubmed24n1094.xml
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|a (DE-627)NLM328364940
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|a (NLM)34291519
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Giri, Anupam
|e verfasserin
|4 aut
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|a Surface Diffusion and Epitaxial Self-Planarization for Wafer-Scale Single-Grain Metal Chalcogenide Thin Films
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 02.09.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Although wafer-scale single-grain thin films of 2D metal chalcogenides (MCs) have been extensively sought after during the last decade, the grain size of the MC thin films is still limited in the sub-millimeter scale. A general strategy of synthesizing wafer-scale single-grain MC thin films by using commercial wafers (Si, Ge, GaAs) both as metal source and epitaxial collimator is presented. A new mechanism of single-grain thin-film formation, surface diffusion, and epitaxial self-planarization is proposed, where chalcogen elements migrate preferentially along substrate surface and the epitaxial crystal domains flow to form an atomically smooth thin film. Through synchrotron X-ray diffraction and high-resolution scanning transmission electron microscopy, the formation of single-grain Si2 Te3 , GeTe, GeSe, and GaTe thin films on (111) Si, Ge, and (100) GaAs is verified. The Si2 Te3 thin film is used to achieve transfer-free fabrication of a high-performance bipolar memristive electrical-switching device
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|a Journal Article
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|a 2D materials
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|a epitaxial self-planarization
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|a metal chalcogenides
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|a transfer-free device fabrication
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|a wafer-scale single-crystal thin films
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|a Kumar, Manish
|e verfasserin
|4 aut
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|a Kim, Jaeseon
|e verfasserin
|4 aut
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|a Pal, Monalisa
|e verfasserin
|4 aut
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|a Banerjee, Writam
|e verfasserin
|4 aut
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|a Nikam, Revannath Dnyandeo
|e verfasserin
|4 aut
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|a Kwak, Junghyeok
|e verfasserin
|4 aut
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|a Kong, Minsik
|e verfasserin
|4 aut
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|a Kim, Seong Hun
|e verfasserin
|4 aut
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|a Thiyagarajan, Kaliannan
|e verfasserin
|4 aut
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|a Kim, Geonwoo
|e verfasserin
|4 aut
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|a Hwang, Hyunsang
|e verfasserin
|4 aut
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|a Lee, Hyun Hwi
|e verfasserin
|4 aut
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|a Lee, Donghwa
|e verfasserin
|4 aut
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|a Jeong, Unyong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 35 vom: 07. Sept., Seite e2102252
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:35
|g day:07
|g month:09
|g pages:e2102252
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|u http://dx.doi.org/10.1002/adma.202102252
|3 Volltext
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