Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations
The identification of the incorporated site of magnesium (Mg) and hydrogen (H) required for p-type formation in gallium nitride (GaN) power devices has been demonstrated by X-ray absorption spectroscopy (XAS). In this study, the fluorescence line of Mg with 3 × 1019 atoms cm-3 was successfully separ...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 28(2021), Pt 4 vom: 01. Juli, Seite 1114-1118 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
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2021
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article X-ray absorption fine structure density functional theory dopants gallium nitride magnesium |
| Online verfügbar |
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