Advanced Data Encryption ​using 2D Materials

Advanced Data Encryption ​using 2D Materials

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 27 vom: 30. Juli, Seite e2100185
1. Verfasser: Wen, Chao (VerfasserIn)
Weitere Verfasser: Li, Xuehua, Zanotti, Tommaso, Puglisi, Francesco Maria, Shi, Yuanyuan, Saiz, Fernan, Antidormi, Aleandro, Roche, Stephan, Zheng, Wenwen, Liang, Xianhu, Hu, Jiaxin, Duhm, Steffen, Roldan, Juan B, Wu, Tianru, Chen, Victoria, Pop, Eric, Garrido, Blas, Zhu, Kaichen, Hui, Fei, Lanza, Mario
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials data encryption hexagonal boron nitride molecular dynamics random telegraph noise true random number generators
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences of bits. TRNG circuits with high degree of randomness and low power consumption may be fabricated by using the random telegraph noise (RTN) current signals produced by polarized metal/insulator/metal (MIM) devices as entropy source. However, the RTN signals produced by MIM devices made of traditional insulators, i.e., transition metal oxides like HfO2 and Al2 O3 , are not stable enough due to the formation and lateral expansion of defect clusters, resulting in undesired current fluctuations and the disappearance of the RTN effect. Here, the fabrication of highly stable TRNG circuits with low power consumption, high degree of randomness (even for a long string of 224  - 1 bits), and high throughput of 1 Mbit s-1 by using MIM devices made of multilayer hexagonal boron nitride (h-BN) is shown. Their application is also demonstrated to produce one-time passwords, which is ideal for the internet-of-everything. The superior stability of the h-BN-based TRNG is related to the presence of few-atoms-wide defects embedded within the layered and crystalline structure of the h-BN stack, which produces a confinement effect that avoids their lateral expansion and results in stable operation
Beschreibung:Date Revised 08.07.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202100185