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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202101981
|2 doi
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|a pubmed24n1085.xml
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|a (DE-627)NLM325773491
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|a (NLM)34028102
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Xu, Wentao
|e verfasserin
|4 aut
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| 245 |
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|a Supra-Binary Polarization in a Ferroelectric Nanowire
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 02.07.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage
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|a Journal Article
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|a Landau-Ginzburg theory
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| 650 |
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|a ferroelectric nanowires
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|a field-effect transistors
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4 |
|a graphene nanoribbons
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4 |
|a quaternary polarization switching
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| 700 |
1 |
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|a Wang, Lihua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, David ChangMo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hajibabaei, Amir
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Yeongjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Cheolmin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Tae-Woo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Kwang S
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 26 vom: 21. Juli, Seite e2101981
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:33
|g year:2021
|g number:26
|g day:21
|g month:07
|g pages:e2101981
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202101981
|3 Volltext
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