Supra-Binary Polarization in a Ferroelectric Nanowire

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 26 vom: 21. Juli, Seite e2101981
1. Verfasser: Xu, Wentao (VerfasserIn)
Weitere Verfasser: Wang, Lihua, Yang, David ChangMo, Hajibabaei, Amir, Lee, Yeongjun, Park, Cheolmin, Lee, Tae-Woo, Kim, Kwang S
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Landau-Ginzburg theory ferroelectric nanowires field-effect transistors graphene nanoribbons quaternary polarization switching
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
The prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current-voltage hysteresis in the FNW-GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage
Beschreibung:Date Revised 02.07.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202101981