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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202008194
|2 doi
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|a pubmed24n1073.xml
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|a (DE-627)NLM322035392
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|a (NLM)33645858
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Li, Xun-Lu
|e verfasserin
|4 aut
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|a Whole-Voltage-Range Oxygen Redox in P2-Layered Cathode Materials for Sodium-Ion Batteries
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 02.04.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Oxygen-redox of layer-structured metal-oxide cathodes has drawn great attention as an effective approach to break through the bottleneck of their capacity limit. However, reversible oxygen-redox can only be obtained in the high-voltage region (usually over 3.5 V) in current metal-oxide cathodes. Here, we realize reversible oxygen-redox in a wide voltage range of 1.5-4.5 V in a P2-layered Na0.7 Mg0.2 [Fe0.2 Mn0.6 □0.2 ]O2 cathode material, where intrinsic vacancies are located in transition-metal (TM) sites and Mg-ions are located in Na sites. Mg-ions in the Na layer serve as "pillars" to stabilize the layered structure during electrochemical cycling, especially in the high-voltage region. Intrinsic vacancies in the TM layer create the local configurations of "□-O-□", "Na-O-□" and "Mg-O-□" to trigger oxygen-redox in the whole voltage range of charge-discharge. Time-resolved techniques demonstrate that the P2 phase is well maintained in a wide potential window range of 1.5-4.5 V even at 10 C. It is revealed that charge compensation from Mn- and O-ions contributes to the whole voltage range of 1.5-4.5 V, while the redox of Fe-ions only contributes to the high-voltage region of 3.0-4.5 V. The orphaned electrons in the nonbonding 2p orbitals of O that point toward TM-vacancy sites are responsible for reversible oxygen-redox, and Mg-ions in Na sites suppress oxygen release effectively
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|a Journal Article
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|a Mg substitution
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|a Na-ion batteries
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|a cathode materials
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|a layered structures
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|a oxygen redox
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|a Wang, Tian
|e verfasserin
|4 aut
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|a Yuan, Yifei
|e verfasserin
|4 aut
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|a Yue, Xin-Yang
|e verfasserin
|4 aut
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|a Wang, Qin-Chao
|e verfasserin
|4 aut
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|a Wang, Jun-Yang
|e verfasserin
|4 aut
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|a Zhong, Jun
|e verfasserin
|4 aut
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|a Lin, Ruo-Qian
|e verfasserin
|4 aut
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|a Yao, Yuan
|e verfasserin
|4 aut
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|a Wu, Xiao-Jing
|e verfasserin
|4 aut
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|a Yu, Xi-Qian
|e verfasserin
|4 aut
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|a Fu, Zheng-Wen
|e verfasserin
|4 aut
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|a Xia, Yong-Yao
|e verfasserin
|4 aut
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|a Yang, Xiao-Qing
|e verfasserin
|4 aut
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|a Liu, Tongchao
|e verfasserin
|4 aut
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|a Amine, Khalil
|e verfasserin
|4 aut
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|a Shadike, Zulipiya
|e verfasserin
|4 aut
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|a Zhou, Yong-Ning
|e verfasserin
|4 aut
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|a Lu, Jun
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 13 vom: 01. Apr., Seite e2008194
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:13
|g day:01
|g month:04
|g pages:e2008194
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|u http://dx.doi.org/10.1002/adma.202008194
|3 Volltext
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|a GBV_USEFLAG_A
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|a GBV_ILN_350
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|a AR
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|d 33
|j 2021
|e 13
|b 01
|c 04
|h e2008194
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