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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1063/5.0016100
|2 doi
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|a pubmed24n1073.xml
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|a DE-627
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|a eng
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| 100 |
1 |
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|a Zhang, Delin
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 04.03.2021
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by a Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (K u ~ 10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a K u ~ 6.8 Merg/cm3 can be obtained with the annealing temperature of 500 °C. In addition, the damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for as-deposited FePd sample and from 0.006 to 0.012 for 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices
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|a Journal Article
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| 700 |
1 |
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|a Huang, Dingbin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Ryan J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lattery, Dustin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Jinming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xinjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gopman, Daniel B
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Mkhoyan, K Andre
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jian-Ping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xiaoxia
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Applied physics letters
|d 1998
|g 117(2020), 8 vom: 01.
|w (DE-627)NLM098165984
|x 0003-6951
|7 nnns
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| 773 |
1 |
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|g volume:117
|g year:2020
|g number:8
|g day:01
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| 856 |
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|u http://dx.doi.org/10.1063/5.0016100
|3 Volltext
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