Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures
Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films...
| Veröffentlicht in: | Applied physics letters. - 1998. - 117(2020), 8 vom: 01. |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2020
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| Zugriff auf das übergeordnete Werk: | Applied physics letters |
| Schlagworte: | Journal Article |
| Zusammenfassung: | Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by a Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (K u ~ 10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a K u ~ 6.8 Merg/cm3 can be obtained with the annealing temperature of 500 °C. In addition, the damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for as-deposited FePd sample and from 0.006 to 0.012 for 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices |
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| Beschreibung: | Date Revised 04.03.2021 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/5.0016100 |