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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202007186
|2 doi
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|a pubmed24n1073.xml
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|a (DE-627)NLM321927079
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|a (NLM)33634556
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Shin, Jung Ho
|e verfasserin
|4 aut
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| 245 |
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|a A Flash-Induced Robust Cu Electrode on Glass Substrates and Its Application for Thin-Film μLEDs
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 02.04.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a A robust Cu conductor on a glass substrate for thin-film μLEDs using the flash-induced chemical/physical interlocking between Cu and glass is reported. During millisecond light irradiation, CuO nanoparticles (NPs) on the display substrate are transformed into a conductive Cu film by reduction and sintering. At the same time, intensive heating at the boundary of CuO NPs and glass chemically induces the formation of an ultrathin Cu2 O interlayer within the Cu/glass interface for strong adhesion. Cu nanointerlocking occurs by transient glass softening and interface fluctuation to increase the contact area. Owing to these flash-induced interfacial interactions, the flash-activated Cu electrode exhibits an adhesion energy of 10 J m-2 , which is five times higher than that of vacuum-deposited Cu. An AlGaInP thin-film vertical μLED (VLED) forms an electrical interconnection with the flash-induced Cu electrode via an ACF bonding process, resulting in a high optical power density of 41 mW mm-2 . The Cu conductor enables reliable VLED operation regardless of harsh thermal stress and moisture infiltration under a high-temperature storage test, temperature humidity test, and thermal shock test. 50 × 50 VLED arrays transferred onto the flash-induced robust Cu electrode show high illumination yield and uniform distribution of forward voltage, peak wavelength, and device temperature
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|a Journal Article
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|a Cu electrodes
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|a glass
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|a interface chemistry
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|a physical interlocking
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|a thin-film μLEDs
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|a Park, Jung Hwan
|e verfasserin
|4 aut
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|a Seo, Jeongmin
|e verfasserin
|4 aut
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1 |
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|a Im, Tae Hong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jong Chan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Han Eol
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Do Hyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Woo, Kie Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jeong, Hu Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cho, Yong-Hoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Taek-Soo
|e verfasserin
|4 aut
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|a Kang, Il-Suk
|e verfasserin
|4 aut
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|a Lee, Keon Jae
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 13 vom: 10. Apr., Seite e2007186
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:13
|g day:10
|g month:04
|g pages:e2007186
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|u http://dx.doi.org/10.1002/adma.202007186
|3 Volltext
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