Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Comprehensive evaluation of through-silicon via (TSV) reliability often requires deterministic and 3D descriptions of local morphological and statistical features of via formation with the Bosch process. Here, a highly sensitive phase-contrast X-ray microtomography approach is presented based on rec...

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Veröffentlicht in:Journal of synchrotron radiation. - 1994. - 27(2020), Pt 4 vom: 01. Juli, Seite 1023-1032
1. Verfasser: Li, Ke (VerfasserIn)
Weitere Verfasser: Deng, Biao, Zhang, Haipeng, Yu, Fucheng, Xue, Yanling, Xie, Changqing, Ye, Tianchun, Xiao, Tiqiao
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Journal of synchrotron radiation
Schlagworte:Journal Article 3D integration TSV etching X-ray microtomography phase contrast