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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202000769
|2 doi
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|a pubmed24n1045.xml
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|a (DE-627)NLM313783853
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Jia
|e verfasserin
|4 aut
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|a Atomically Thin Hexagonal Boron Nitride and Its Heterostructures
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 10.02.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized
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|a Journal Article
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|a Review
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|a chemical vapor deposition
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|a electronics
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|a heterostructures
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|a hexagonal boron nitride
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| 650 |
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|a optoelectronics
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| 700 |
1 |
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|a Tan, Biying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Feng
|e verfasserin
|4 aut
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| 700 |
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|a Hu, Yunxia
|e verfasserin
|4 aut
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|a Wang, Lifeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Duan, Xiaoming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Zhihua
|e verfasserin
|4 aut
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| 700 |
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|a Hu, PingAn
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 6 vom: 15. Feb., Seite e2000769
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:6
|g day:15
|g month:02
|g pages:e2000769
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|u http://dx.doi.org/10.1002/adma.202000769
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