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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202003033
|2 doi
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|a pubmed24n1043.xml
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|a (DE-627)NLM313047502
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|a (NLM)32729146
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Yang, Yuben
|e verfasserin
|4 aut
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| 245 |
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|a Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The coexistence of large conductivity and robust ferroelectricity is promising for high-performance ferroelectric devices based on polarization-controllable highly efficient carrier transport. Distinct from traditional perovskite ferroelectrics, Bi2 WO6 with a layered structure shows a great potential to preserve its ferroelectricity under substantial electron doping. Herein, by artificial design of photosensitive heterostructures with desired band alignment, three orders of magnitude enhancement of the short-circuit photocurrent is achieved in Bi2 WO6 /SrTiO3 at room temperature. The microscopic mechanism of this large photocurrent originates from separated transport of electrons and holes in [WO4 ]-2 and [Bi2 O2 ]+2 layers respectively with a large in-plane conductivity, which is understood by a combination of ab initio calculations and spectroscopic measurements. The layered electronic structure and appropriately designed band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high-performance and nonvolatile switchable electronic devices
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|a Journal Article
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|a 2D potential wells
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|a Bi2WO6
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|a layered ferroelectric materials
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|a photovoltaics
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|a switchable photoconduction
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|a Mao, Huican
|e verfasserin
|4 aut
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|a Wang, Jing
|e verfasserin
|4 aut
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1 |
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|a Zhang, Qinghua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jin, Lei
|e verfasserin
|4 aut
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1 |
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|a Wang, Chuanshou
|e verfasserin
|4 aut
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1 |
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|a Zhang, Yuelin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Su, Nan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Fanqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Ying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xia, Ruqiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Rongyan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gu, Lin
|e verfasserin
|4 aut
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1 |
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|a Yin, Zhiping
|e verfasserin
|4 aut
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|a Nan, Ce-Wen
|e verfasserin
|4 aut
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|a Zhang, Jinxing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 37 vom: 23. Sept., Seite e2003033
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:37
|g day:23
|g month:09
|g pages:e2003033
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|u http://dx.doi.org/10.1002/adma.202003033
|3 Volltext
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|d 32
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