Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 37 vom: 23. Sept., Seite e2003033
1. Verfasser: Yang, Yuben (VerfasserIn)
Weitere Verfasser: Mao, Huican, Wang, Jing, Zhang, Qinghua, Jin, Lei, Wang, Chuanshou, Zhang, Yuelin, Su, Nan, Meng, Fanqi, Yang, Ying, Xia, Ruqiao, Chen, Rongyan, Zhu, Hui, Gu, Lin, Yin, Zhiping, Nan, Ce-Wen, Zhang, Jinxing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D potential wells Bi2WO6 layered ferroelectric materials photovoltaics switchable photoconduction
Beschreibung
Zusammenfassung:© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The coexistence of large conductivity and robust ferroelectricity is promising for high-performance ferroelectric devices based on polarization-controllable highly efficient carrier transport. Distinct from traditional perovskite ferroelectrics, Bi2 WO6 with a layered structure shows a great potential to preserve its ferroelectricity under substantial electron doping. Herein, by artificial design of photosensitive heterostructures with desired band alignment, three orders of magnitude enhancement of the short-circuit photocurrent is achieved in Bi2 WO6 /SrTiO3 at room temperature. The microscopic mechanism of this large photocurrent originates from separated transport of electrons and holes in [WO4 ]-2 and [Bi2 O2 ]+2 layers respectively with a large in-plane conductivity, which is understood by a combination of ab initio calculations and spectroscopic measurements. The layered electronic structure and appropriately designed band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high-performance and nonvolatile switchable electronic devices
Beschreibung:Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202003033