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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202002300
|2 doi
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|a pubmed24n1034.xml
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|a (DE-627)NLM310317363
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|a (NLM)32449568
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Guo, Huixin
|e verfasserin
|4 aut
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|a Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel-junction devices based on effective manipulation of antiferromagnetic spins. In this work, the giant piezoelectric strain modulation of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal-D019 hexagonal Mn3 Ga-is demonstrated. Furthermore, tunnel-junction devices are built with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications
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|a Journal Article
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|a Mn3Ga
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|a anomalous Hall effect
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|a antiferromagnetic piezospintronics
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|a magnetic tunnel junctions
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|a noncollinear antiferromagnets
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|a Feng, Zexin
|e verfasserin
|4 aut
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|a Yan, Han
|e verfasserin
|4 aut
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|a Liu, Jiuzhao
|e verfasserin
|4 aut
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|a Zhang, Jia
|e verfasserin
|4 aut
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1 |
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|a Zhou, Xiaorong
|e verfasserin
|4 aut
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1 |
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|a Qin, Peixin
|e verfasserin
|4 aut
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1 |
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|a Cai, Jialin
|e verfasserin
|4 aut
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|a Zeng, Zhongming
|e verfasserin
|4 aut
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|a Zhang, Xin
|e verfasserin
|4 aut
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|a Wang, Xiaoning
|e verfasserin
|4 aut
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|a Chen, Hongyu
|e verfasserin
|4 aut
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1 |
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|a Wu, Haojiang
|e verfasserin
|4 aut
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|a Jiang, Chengbao
|e verfasserin
|4 aut
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|a Liu, Zhiqi
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 26 vom: 01. Juli, Seite e2002300
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:32
|g year:2020
|g number:26
|g day:01
|g month:07
|g pages:e2002300
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|u http://dx.doi.org/10.1002/adma.202002300
|3 Volltext
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|d 32
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