Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 26 vom: 01. Juli, Seite e2002300
1. Verfasser:	Guo, Huixin (VerfasserIn)
Weitere Verfasser:	Feng, Zexin, Yan, Han, Liu, Jiuzhao, Zhang, Jia, Zhou, Xiaorong, Qin, Peixin, Cai, Jialin, Zeng, Zhongming, Zhang, Xin, Wang, Xiaoning, Chen, Hongyu, Wu, Haojiang, Jiang, Chengbao, Liu, Zhiqi
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2020
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Mn3Ga anomalous Hall effect antiferromagnetic piezospintronics magnetic tunnel junctions noncollinear antiferromagnets

Beschreibung
Zusammenfassung:	© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel-junction devices based on effective manipulation of antiferromagnetic spins. In this work, the giant piezoelectric strain modulation of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal-D019 hexagonal Mn3 Ga-is demonstrated. Furthermore, tunnel-junction devices are built with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications
Beschreibung:	Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202002300