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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201906238
|2 doi
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|a pubmed25n1025.xml
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|a (DE-627)NLM307618781
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|a (NLM)32173918
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|a DE-627
|b ger
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|a eng
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|a Gu, Yiyi
|e verfasserin
|4 aut
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|a Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2020 Jul;32(28):e2003751. doi: 10.1002/adma.202003751. - PMID 32662929
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Two-dimensional (2D) palladium diselenide (PdSe2 ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures and highly anisotropic in-plane optical and electronic properties. However, the lack of high-quality, 2D PdSe2 crystals grown by bottom-up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few-layer (≥2 layers) PdSe2 crystals on various substrates is reported. The high quality of the PdSe2 crystals is confirmed by low-frequency Raman spectroscopy, scanning transmission electron microscopy, and electrical characterization. In addition, strong in-plane optical anisotropy is demonstrated via polarized Raman spectroscopy and second-harmonic generation maps of the PdSe2 flakes. A theoretical model based on kinetic Wulff construction theory and density functional theory calculations is developed and described the observed evolution of "square-like" shaped PdSe2 crystals into rhombus due to the higher nucleation barriers for stable attachment on the (1,1) and (1,-1) edges, which results in their slower growth rates. Few-layer PdSe2 field-effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up to ≈294 cm2 V-1 s-1 , which is comparable to that of exfoliated PdSe2 , indicating the promise of this anisotropic 2D material for electronics
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|a Journal Article
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|a PdSe2
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|a bottom-up synthesis
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|a chemical vapor deposition
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|a electron mobility
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|a optical anisotropy
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|a Cai, Hui
|e verfasserin
|4 aut
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|a Dong, Jichen
|e verfasserin
|4 aut
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|a Yu, Yiling
|e verfasserin
|4 aut
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|a Hoffman, Anna N
|e verfasserin
|4 aut
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|a Liu, Chenze
|e verfasserin
|4 aut
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|a Oyedele, Akinola D
|e verfasserin
|4 aut
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|a Lin, Yu-Chuan
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|4 aut
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|a Ge, Zhuozhi
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|a Puretzky, Alexander A
|e verfasserin
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|a Duscher, Gerd
|e verfasserin
|4 aut
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|a Chisholm, Matthew F
|e verfasserin
|4 aut
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|a Rack, Philip D
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|4 aut
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|a Rouleau, Christopher M
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|4 aut
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|a Gai, Zheng
|e verfasserin
|4 aut
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|a Meng, Xiangmin
|e verfasserin
|4 aut
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|a Ding, Feng
|e verfasserin
|4 aut
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|a Geohegan, David B
|e verfasserin
|4 aut
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|a Xiao, Kai
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 19 vom: 01. Mai, Seite e1906238
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:32
|g year:2020
|g number:19
|g day:01
|g month:05
|g pages:e1906238
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|u http://dx.doi.org/10.1002/adma.201906238
|3 Volltext
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