Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 19 vom: 01. Mai, Seite e1906238
1. Verfasser:	Gu, Yiyi (VerfasserIn)
Weitere Verfasser:	Cai, Hui, Dong, Jichen, Yu, Yiling, Hoffman, Anna N, Liu, Chenze, Oyedele, Akinola D, Lin, Yu-Chuan, Ge, Zhuozhi, Puretzky, Alexander A, Duscher, Gerd, Chisholm, Matthew F, Rack, Philip D, Rouleau, Christopher M, Gai, Zheng, Meng, Xiangmin, Ding, Feng, Geohegan, David B, Xiao, Kai
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2020
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article PdSe2 bottom-up synthesis chemical vapor deposition electron mobility optical anisotropy

Beschreibung
Zusammenfassung:	© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Two-dimensional (2D) palladium diselenide (PdSe2 ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures and highly anisotropic in-plane optical and electronic properties. However, the lack of high-quality, 2D PdSe2 crystals grown by bottom-up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few-layer (≥2 layers) PdSe2 crystals on various substrates is reported. The high quality of the PdSe2 crystals is confirmed by low-frequency Raman spectroscopy, scanning transmission electron microscopy, and electrical characterization. In addition, strong in-plane optical anisotropy is demonstrated via polarized Raman spectroscopy and second-harmonic generation maps of the PdSe2 flakes. A theoretical model based on kinetic Wulff construction theory and density functional theory calculations is developed and described the observed evolution of "square-like" shaped PdSe2 crystals into rhombus due to the higher nucleation barriers for stable attachment on the (1,1) and (1,-1) edges, which results in their slower growth rates. Few-layer PdSe2 field-effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up to ≈294 cm2 V-1 s-1 , which is comparable to that of exfoliated PdSe2 , indicating the promise of this anisotropic 2D material for electronics
Beschreibung:	Date Revised 30.09.2020 published: Print-Electronic ErratumIn: Adv Mater. 2020 Jul;32(28):e2003751. doi: 10.1002/adma.202003751. - PMID 32662929 Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.201906238