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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201908351
|2 doi
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|a pubmed24n1022.xml
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|a (DE-627)NLM306839849
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|a eng
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|a Stehno, Martin P
|e verfasserin
|4 aut
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|a Josephson Effect and Charge Distribution in Thin Bi2 Te3 Topological Insulators
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Thin layers of topological insulator materials are quasi-2D systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, the Josephson effect, magnetotransport, and weak anti-localization are studied in bottom-gated thin Bi2 Te3 topological insulator films. The experimental carrier densities are compared to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and they are in excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions
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|a Journal Article
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|a Josephson junctions
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|a bismuth telluride
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|a diffusive transport
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|a superconductivity
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|a topological insulators
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1 |
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|a Ngabonziza, Prosper
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Myoren, Hiroaki
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Brinkman, Alexander
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 14 vom: 01. Apr., Seite e1908351
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:14
|g day:01
|g month:04
|g pages:e1908351
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|u http://dx.doi.org/10.1002/adma.201908351
|3 Volltext
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